SI4485DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.96 EUR |
| 18+ | 1.21 EUR |
| 50+ | 0.9 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.62 EUR |
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Technische Details SI4485DY-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 6A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.4W (Ta), 5W (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4485DY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SI4485DY-T1-GE3 | Vishay |
Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
|
SI4485DY-T1-GE3 | Vishay |
Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 32 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
SI4485DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 6A 8SO Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 2200 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 2200 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI4485DY-T1-GE3 |
|
auf Bestellung 58588 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4485DY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| SI4485DY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| SI4485DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)
| SI4485DY-T1-GE3 |
|
auf Bestellung 58588 Stücke:
Lieferzeit 21-28 Tag (e)