auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.24 EUR |
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Technische Details SI4485DY-T1-GE3 Vishay
Description: MOSFET P-CH 30V 6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V, Power Dissipation (Max): 2.4W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V.
Weitere Produktangebote SI4485DY-T1-GE3 nach Preis ab 0.24 EUR bis 1.69 EUR
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SI4485DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4485DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 6A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4485DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V 6.0A 5.0W 42mohm @ 10V |
auf Bestellung 3359 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4485DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
auf Bestellung 3731 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4485DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4485DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 6A 8-Pin SOIC N T/R |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4485DY-T1-GE3 |
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auf Bestellung 58588 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4485DY-T1-GE3 |
VISHAY SOP-8 12+ |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4485DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6A; Idm: -25A; 5W Case: SO8 Drain-source voltage: -30V Drain current: -6A On-state resistance: 72mΩ Type of transistor: P-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -25A Mounting: SMD Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SI4485DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6A; Idm: -25A; 5W Case: SO8 Drain-source voltage: -30V Drain current: -6A On-state resistance: 72mΩ Type of transistor: P-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -25A Mounting: SMD |
Produkt ist nicht verfügbar |