Technische Details SI4511DY-T1-E3 VISHAY
Description: MOSFET N/P-CH 20V 7.2A 8-SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4511DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI4511DYT1E3 | Hersteller : VISHAY |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4511DY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4511DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4511DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V 7.2A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |