Technische Details SI4544DY-T1-E3 VISHAY
Description: MOSFET N/P-CH 30V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W, Drain to Source Voltage (Vdss): 30V, Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4544DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SI4544DYT1E3 | Hersteller : VISHAY |
auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
|||
 |
SI4544DY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N/P-CH 30V 6.5A/5.7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
|
 |
SI4544DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 30V Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |