SI4554DY-T1-GE3 Vishay Siliconix

Description: MOSFET N/P-CH 40V 8A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.2V @ 250µA, FET Feature: Logic Level Gate, Rds On (Max) @ Id, Vgs: 24mOhm @ 6.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 8A, Drain to Source Voltage (Vdss): 40V, Power - Max: 3.1W, 3.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V.