auf Bestellung 2448 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 160+ | 0.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4564DY-T1-GE3 Vishay
Description: MOSFET N/P-CH 40V 10A/9.2A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, 3.2W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10A, 9.2A, Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V, Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4564DY-T1-GE3 nach Preis ab 0.98 EUR bis 3.2 EUR
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SI4564DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N/P-CH 40V 8A/7.2A 8-Pin SOIC N T/R |
auf Bestellung 2448 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4564DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 40V N&P-CHANNEL |
auf Bestellung 25449 Stücke: Lieferzeit 764-778 Tag (e) |
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SI4564DY-T1-GE3 Produktcode: 49736 |
Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
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SI4564DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 40V 10A/9.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4564DY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 40V; 8/-7.4A; 2/2.1W Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 8/-7.4A Pulsed drain current: 40A Power dissipation: 2/2.1W Case: SO8 Gate-source voltage: ±16V; ±20V On-state resistance: 17.5/21mΩ Mounting: SMD Gate charge: 31/63nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4564DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 40V 10A/9.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W, 3.2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A, 9.2A Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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SI4564DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 40V 10A/9.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W, 3.2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A, 9.2A Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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SI4564DY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 40V; 8/-7.4A; 2/2.1W Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 8/-7.4A Pulsed drain current: 40A Power dissipation: 2/2.1W Case: SO8 Gate-source voltage: ±16V; ±20V On-state resistance: 17.5/21mΩ Mounting: SMD Gate charge: 31/63nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |