Technische Details SI4567DY-T1-E3 VISHAY
Description: MOSFET N/P-CH 40V 5A/4.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.75W, 2.95W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 5A, 4.4A, Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V, Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4567DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI4567DYT1E3 | Hersteller : VISHAY |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4567DY-T1-E3 | Hersteller : VISHAY | 09+ |
auf Bestellung 2518 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4567DY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N/P-CH 40V 4.1A/3.6A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4567DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 40V 5A/4.4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.75W, 2.95W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A, 4.4A Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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SI4567DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 40V 5A/4.4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.75W, 2.95W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A, 4.4A Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |