Technische Details SI4670DY-T1-GE3 Vishay
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 25V; 8A, Type of transistor: N-MOSFET x2 + Schottky, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 25V, Drain current: 8A, Pulsed drain current: 30A, Power dissipation: 2.8W, Case: SO8, Gate-source voltage: ±16V, On-state resistance: 28mΩ, Mounting: SMD, Gate charge: 18nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote SI4670DY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI4670DY-T1-GE3 | Hersteller : VISHAY |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 25V; 8A Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 8A Pulsed drain current: 30A Power dissipation: 2.8W Case: SO8 Gate-source voltage: ±16V On-state resistance: 28mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4670DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 25V 8A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4670DY-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 25V Vds 16V Vgs SO-8 |
Produkt ist nicht verfügbar |
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| SI4670DY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 25V; 8A Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 8A Pulsed drain current: 30A Power dissipation: 2.8W Case: SO8 Gate-source voltage: ±16V On-state resistance: 28mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |