SI4778DY-T1-E3 (Vishay) - Transistoren - Transistoren N-Kanal-Feld

SI4778DY-T1-E3

SI4778DY-T1-E3

Produktcode: 101194
Hersteller: Vishay
Transistoren - Transistoren N-Kanal-Feld

si4778dy-datasheet.pdf
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Technische Details SI4778DY-T1-E3

Preis SI4778DY-T1-E3 ab 0.54 EUR bis 1.58 EUR

SI4778DY-T1-E3
Hersteller: Vishay
Trans MOSFET N-CH 25V 8A 8-Pin SOIC N T/R
si4778dy.pdf si4778dy.pdf
auf Bestellung 1158 Stücke
Lieferzeit 14-21 Tag (e)
105+ 1.58 EUR
125+ 1.27 EUR
132+ 1.17 EUR
160+ 0.92 EUR
171+ 0.83 EUR
250+ 0.71 EUR
500+ 0.57 EUR
1000+ 0.54 EUR
SI4778DYT1E3
Hersteller: VISHAY

35000 Stücke
SI4778DY-T1-E3
Hersteller: VISHAY

si4778dy.pdf si4778dy.pdf
35000 Stücke
SI4778DY-T1-E3
Hersteller:

si4778dy.pdf si4778dy.pdf
14500 Stücke
SI4778DYT1E3
Hersteller:

35000 Stücke
SI4778DY-T1-E3
SI4778DY-T1-E3
Hersteller: Vishay / Siliconix
MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3
si4778dy-1765330.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4778DY-T1-E3
SI4778DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
si4778dy.pdf
auf Bestellung 1979 Stücke
Lieferzeit 21-28 Tag (e)
SI4778DY-T1-E3
SI4778DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8SO
Base Part Number: SI4778
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
si4778dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4778DY-T1-E3
SI4778DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8SO
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Base Part Number: SI4778
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Obsolete
Manufacturer: Vishay Siliconix
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 25V
si4778dy.pdf
auf Bestellung 1559 Stücke
Lieferzeit 21-28 Tag (e)