Technische Details SI4778DY-T1-E3 VISHAY
Description: MOSFET N-CH 25V 8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V, Power Dissipation (Max): 2.4W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 13 V.
Weitere Produktangebote SI4778DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI4778DYT1E3 | Hersteller : VISHAY |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4778DY-T1-E3 Produktcode: 101194 |
Hersteller : Vishay |
 Transistoren > MOSFET N-CHGehäuse: SO-8 Uds,V: 25 V Idd,A: 8 A Rds(on), Ohm: 0,028 Ohm Ciss, pF/Qg, nC: 680/12 JHGF: SMD |
Produkt ist nicht verfügbar
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SI4778DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 25V 8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4778DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 25V 8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 13 V |
Produkt ist nicht verfügbar |
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SI4778DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 25V 8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 13 V |
Produkt ist nicht verfügbar |
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SI4778DY-T1-E3 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3 |
Produkt ist nicht verfügbar |