
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
667+ | 0.22 EUR |
678+ | 0.21 EUR |
689+ | 0.20 EUR |
700+ | 0.19 EUR |
712+ | 0.18 EUR |
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Technische Details SI4800BDY-T1-E3 Vishay
Description: MOSFET N-CH 30V 6.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V.
Weitere Produktangebote SI4800BDY-T1-E3 nach Preis ab 0.16 EUR bis 1.27 EUR
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SI4800BDY-T1-E3 | Hersteller : Vishay |
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auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4800BDY-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4800BDY-T1-E3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 6081 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4800BDY-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W Polarisation: unipolar Drain current: 7A Drain-source voltage: 30V Power dissipation: 2.5W Case: SO8 Kind of package: reel; tape Gate charge: 13nC Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±25V Pulsed drain current: 40A On-state resistance: 30mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1845 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4800BDY-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W Polarisation: unipolar Drain current: 7A Drain-source voltage: 30V Power dissipation: 2.5W Case: SO8 Kind of package: reel; tape Gate charge: 13nC Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±25V Pulsed drain current: 40A On-state resistance: 30mΩ Type of transistor: N-MOSFET |
auf Bestellung 1845 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4800BDY-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
auf Bestellung 6799 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4800BDY-T1-E3 | Hersteller : Vishay |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4800BDY-T1-E3 | Hersteller : Siliconix |
![]() Anzahl je Verpackung: 15 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4800BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4800BDY-T1-E3 Produktcode: 52358
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SI4800BDY-T1-E3 | Hersteller : Vishay |
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