SI4800BDY-T1-GE3 Vishay / Siliconix
auf Bestellung 13021 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.61 EUR |
| 2500+ | 0.55 EUR |
| 5000+ | 0.54 EUR |
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Technische Details SI4800BDY-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 30V 6.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V.
Weitere Produktangebote SI4800BDY-T1-GE3 nach Preis ab 0.65 EUR bis 1.78 EUR
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SI4800BDY-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 6.5A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
auf Bestellung 2515 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4800BDY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R |
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SI4800BDY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4800BDY-T1-GE3 | Hersteller : VISHAY |
SI4800BDY-T1-GE3 SMD N channel transistors |
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SI4800BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 6.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
Produkt ist nicht verfügbar |