SI4831BDYT1E3 VISHAY

Description: MOSFET P-CH 30V 6.6A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), 3.3W (Tc), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).