SI4836DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8SO
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
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Technische Details SI4836DY-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8SO, Vgs(th) (Max) @ Id: 400mV @ 250µA (Min), Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: 8-SOIC.