SI4838DY-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 12V 17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 2.35 EUR |
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Technische Details SI4838DY-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V.
Weitere Produktangebote SI4838DY-T1-E3 nach Preis ab 2.43 EUR bis 6.88 EUR
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SI4838DY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs RECOMMENDED ALT SI48 |
auf Bestellung 7330 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4838DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 12V 17A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V |
auf Bestellung 7205 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4838DYT1E3 | Hersteller : VISHAY |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4838DY-T1-E3 | Hersteller : VISHAY |
SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4838DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 12V 17A 8-Pin SOIC N T/R |
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SI4838DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 12V 17A 8-Pin SOIC N T/R |
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SI4838DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 12V 17A 8-Pin SOIC N T/R |
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| SI4838DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 25A; Idm: 60A; 3.5W Case: SO8 Drain-source voltage: 12V Drain current: 25A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 3.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 60nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SI4838DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 25A; Idm: 60A; 3.5W Case: SO8 Drain-source voltage: 12V Drain current: 25A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 3.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 60nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD |
Produkt ist nicht verfügbar |