SI4848BDY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET SO-
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.45 EUR |
| 5000+ | 0.4 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4848BDY-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET SO-, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc), Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4848BDY-T1-GE3 nach Preis ab 0.36 EUR bis 1.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI4848BDY-T1-GE3 | Vishay / Siliconix |
MOSFETs N-Channel 150-V (D-S) MOSFET SO-8, 89 m a. 10V |
auf Bestellung 3087 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI4848BDY-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 150-V (D-S) MOSFET SO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc) |
auf Bestellung 9803 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI4848BDY-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs N-Channel 150-V (D-S) MOSFET SO-8, 89 m a. 10V
MOSFETs N-Channel 150-V (D-S) MOSFET SO-8, 89 m a. 10V
auf Bestellung 3087 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.18 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |
| 2500+ | 0.42 EUR |
| 5000+ | 0.36 EUR |
| SI4848BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET SO-
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc)
Description: N-CHANNEL 150-V (D-S) MOSFET SO-
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc)
auf Bestellung 9803 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.27 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |