SI4896DY-E3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; 3.1W; SO8, Polarisation: unipolar, Kind of package: reel; tape, Case: SO8, Gate charge: 41nC, Kind of channel: enhanced, Mounting: SMD, Gate-source voltage: ±20V, Type of transistor: N-MOSFET, Power dissipation: 3.1W, On-state resistance: 22mΩ, Drain current: 7.6A, Drain-source voltage: 80V, Anzahl je Verpackung: 1 Stücke.