auf Bestellung 1991 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 118+ | 1.24 EUR |
Produktrezensionen
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Technische Details SI4904DY-T1-GE3 Vishay
Description: MOSFET 2N-CH 40V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.25W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V, Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4904DY-T1-GE3 nach Preis ab 0.9 EUR bis 4.56 EUR
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SI4904DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 40V 8A 8-Pin SOIC N T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4904DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 40V Vds 16V Vgs SO-8 |
auf Bestellung 15430 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4904DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.25W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 1076 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4904DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4904DY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 20A Case: SO8 Drain-source voltage: 40V Drain current: 8A On-state resistance: 19mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 85nC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4904DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.25W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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| SI4904DY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 20A Case: SO8 Drain-source voltage: 40V Drain current: 8A On-state resistance: 19mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 85nC |
Produkt ist nicht verfügbar |