Technische Details Si4914BDY-T1-E3 Vishay / Siliconix
Description: MOSFET 2N-CH 30V 8.4A/8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W, 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote Si4914BDY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI4914BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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| Si4914BDY-T1-E3 |
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auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4914BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 6.7A/7.4A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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Si4914BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8.4A/8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W, 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |