SI4925BDY-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 3.61 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.35 EUR |
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Technische Details SI4925BDY-T1-GE3 Vishay Semiconductors
Description: MOSFET 2P-CH 30V 5.3A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.3A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4925BDY-T1-GE3 nach Preis ab 1.61 EUR bis 3.66 EUR
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SI4925BDY-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2P-CH 30V 5.3A 8SOICCurrent - Continuous Drain (Id) @ 25°C: 5.3A Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V |
auf Bestellung 308 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4925BDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.3A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Description: MOSFET 2P-CH 30V 5.3A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.66 EUR |
| 10+ | 2.36 EUR |
| 100+ | 1.61 EUR |