| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.23 EUR |
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Technische Details SI4931DY-T1-E3 Vishay Semiconductors
Description: MOSFET 2P-CH 12V 6.7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 6.7A, Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 350µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4931DY-T1-E3 nach Preis ab 2.02 EUR bis 3.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
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SI4931DY-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2P-CH 12V 6.7A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.7A Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 350µA Supplier Device Package: 8-SOIC |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4931DY-T1-E3 | Vishay |
Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||
| SI4931DY-T1-E3 | VISHAY |
|
auf Bestellung 94000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||
| SI4931DYT1E3 | VISHAY |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4931DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 6.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2P-CH 12V 6.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 2.02 EUR |
| SI4931DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| SI4931DY-T1-E3 |
|
Hersteller: VISHAY
auf Bestellung 94000 Stücke:
Lieferzeit 21-28 Tag (e)
| SI4931DYT1E3 |
Hersteller: VISHAY
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)