auf Bestellung 891 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 135+ | 1.10 EUR |
| 136+ | 1.05 EUR |
| 151+ | 0.91 EUR |
| 250+ | 0.87 EUR |
| 500+ | 0.81 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4931DY-T1-GE3 Vishay
Description: MOSFET 2P-CH 12V 6.7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 6.7A, Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 350µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4931DY-T1-GE3 nach Preis ab 0.78 EUR bis 4.56 EUR
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SI4931DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R |
auf Bestellung 891 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4931DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 12V 6.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.7A Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 350µA Supplier Device Package: 8-SOIC |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4931DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs -12V Vds 8V Vgs SO-8 |
auf Bestellung 3408 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4931DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 12V 6.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.7A Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 350µA Supplier Device Package: 8-SOIC |
auf Bestellung 16294 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4931DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4931DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4931DY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8 Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -12V Drain current: -8.9A On-state resistance: 28mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 52nC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SI4931DY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8 Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -12V Drain current: -8.9A On-state resistance: 28mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 52nC |
Produkt ist nicht verfügbar |