| Anzahl | Preis |
|---|---|
| 1+ | 4.26 EUR |
| 10+ | 2.76 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.41 EUR |
| 2500+ | 1.34 EUR |
| 5000+ | 1.32 EUR |
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Technische Details SI4943BDY-T1-E3 Vishay Semiconductors
Description: MOSFET 2P-CH 20V 6.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.3A, Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4943BDY-T1-E3 nach Preis ab 2.75 EUR bis 4.26 EUR
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SI4943BDY-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2P-CH 20V 6.3A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
auf Bestellung 95 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4943BDY-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4943BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4943BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 6.3A 8-Pin SOIC N T/R |
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SI4943BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 6.3A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4943BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 6.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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| SI4943BDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8 Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Kind of package: reel; tape Pulsed drain current: -30A Drain current: -8.4A Gate charge: 25nC Type of transistor: P-MOSFET x2 On-state resistance: 31mΩ Power dissipation: 2W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |