SI4943CDY-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2P-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 1348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.66 EUR |
| 10+ | 2.36 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.27 EUR |
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Technische Details SI4943CDY-T1-E3 Vishay Siliconix
Description: MOSFET 2P-CH 20V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V, Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4943CDY-T1-E3 nach Preis ab 1.29 EUR bis 3.68 EUR
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SI4943CDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs -20V Vds 20V Vgs SO-8 |
auf Bestellung 1781 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4943CDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 8A 8-Pin SOIC N T/R |
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SI4943CDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
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| SI4943CDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Kind of package: reel; tape Pulsed drain current: -30A Drain current: -8A Gate charge: 62nC Type of transistor: P-MOSFET x2 On-state resistance: 33mΩ Power dissipation: 3.1W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |