SI4952DY-T1-E3 VISHAY

Description: MOSFET 2N-CH 25V 8A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V, Current - Continuous Drain (Id) @ 25°C: 8A, Drain to Source Voltage (Vdss): 25V, Power - Max: 2.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V.