Technische Details SI4963BDY-T1-GE3 Vishay
Description: MOSFET 2P-CH 20V 4.9A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.9A, Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4963BDY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI4963BDY-T1-GE3 | Hersteller : VISHAY |
 Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8 Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -40A Case: SO8 Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Anzahl je Verpackung: 2500 Stücke |
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SI4963BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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SI4963BDY-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 20V 6.5A 2.0W 32mohm @ 4.5V |
Produkt ist nicht verfügbar |
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| SI4963BDY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8 Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -40A Case: SO8 Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC |
Produkt ist nicht verfügbar |