SI5402DC-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A 1206-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
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Technische Details SI5402DC-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A 1206-8, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads.