Technische Details SI5429DU-T1-GE3 Vishay
Description: MOSFET P-CH 30V 12A PWR PK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® ChipFET™ Single, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® ChipFET™ Single, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V.
Weitere Produktangebote SI5429DU-T1-GE3
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SI5429DU-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 30V 12A PWR PKPackaging: Tape & Reel (TR) Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® ChipFET™ Single Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V |
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SI5429DU-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs -30V Vds 20V Vgs PowerPAK ChipFET |
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| SI5429DU-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -50A Power dissipation: 31W Case: PowerPAK® ChipFET Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
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