auf Bestellung 2770 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 457+ | 0.32 EUR |
| 464+ | 0.3 EUR |
| 472+ | 0.28 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
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Technische Details SI5442DU-T1-GE3 Vishay
Description: MOSFET N-CH 20V 25A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® ChipFET™ Single, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 4.5V, Power Dissipation (Max): 3.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® ChipFet Single, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V.
Weitere Produktangebote SI5442DU-T1-GE3 nach Preis ab 0.3 EUR bis 1.51 EUR
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SI5442DU-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 20V 25A PPAKPackaging: Tape & Reel (TR) Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 4.5V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® ChipFet Single Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5442DU-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 25A 8-Pin PowerPAK ChipFET T/R |
auf Bestellung 2770 Stücke: Lieferzeit 14-21 Tag (e) |
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SI5442DU-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 20V Vds 8V Vgs PowerPAK ChipFET |
auf Bestellung 7566 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5442DU-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 25A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 4.5V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® ChipFet Single Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V |
auf Bestellung 32607 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5442DU-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 25A 8-Pin PowerPAK ChipFET T/R |
Produkt ist nicht verfügbar |
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| SI5442DU-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 60A; 31W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 25A Pulsed drain current: 60A Power dissipation: 31W Case: PowerPAK® ChipFET Gate-source voltage: ±8V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |