| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI5457DC-T1-GE3 Vishay
Description: MOSFET P-CH 20V 6A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V, Power Dissipation (Max): 5.7W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V.
Weitere Produktangebote SI5457DC-T1-GE3 nach Preis ab 0.18 EUR bis 1.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SI5457DC-T1-GE3 | Vishay |
 Trans MOSFET P-CH 20V 6A 8-Pin Chip FET T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI5457DC-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 6A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V Power Dissipation (Max): 5.7W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
auf Bestellung 26000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5457DC-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 12V Vgs 1206-8 ChipFET |
auf Bestellung 127633 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5457DC-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 6A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V Power Dissipation (Max): 5.7W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
auf Bestellung 26137 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5457DC-T1-GE3 | Vishay |
Trans MOSFET P-CH 20V 6A 8-Pin Chip FET T/R |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI5457DC-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 6A 8-Pin Chip FET T/R
Trans MOSFET P-CH 20V 6A 8-Pin Chip FET T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| SI5457DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.39 EUR |
| 9000+ | 0.36 EUR |
| SI5457DC-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs 1206-8 ChipFET
MOSFETs -20V Vds 12V Vgs 1206-8 ChipFET
auf Bestellung 127633 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.61 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.5 EUR |
| 3000+ | 0.4 EUR |
| SI5457DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 26137 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.63 EUR |
| 21+ | 1.02 EUR |
| 50+ | 0.75 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.5 EUR |
| SI5457DC-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 6A 8-Pin Chip FET T/R
Trans MOSFET P-CH 20V 6A 8-Pin Chip FET T/R
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)