SI5475DC-T1-E3
Hersteller: auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SI5475DC-T1-E3
Description: MOSFET P-CH 12V 5.5A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 450mV @ 1mA (Min), Supplier Device Package: 1206-8 ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V.
Weitere Produktangebote SI5475DC-T1-E3
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SI5475DC-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 5.5A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 450mV @ 1mA (Min) Supplier Device Package: 1206-8 ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V |
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