SI5476DU-T1-GE3 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.59 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.18 EUR |
| 3000+ | 1.15 EUR |
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Technische Details SI5476DU-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 60V 12A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® ChipFET™ Single, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 10V, Power Dissipation (Max): 3.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® ChipFET™ Single, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V.
Weitere Produktangebote SI5476DU-T1-GE3 nach Preis ab 1.02 EUR bis 3.37 EUR
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SI5476DU-T1-GE3 | Vishay |
 Trans MOSFET N-CH 60V 12A 8-Pin PowerPAK ChipFET T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI5476DU-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 12A CHIPFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® ChipFET™ Single Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
auf Bestellung 246 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI5476DU-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 12A 8-Pin PowerPAK ChipFET T/R
Trans MOSFET N-CH 60V 12A 8-Pin PowerPAK ChipFET T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 63+ | 2.78 EUR |
| 71+ | 2.38 EUR |
| 72+ | 2.27 EUR |
| 100+ | 1.69 EUR |
| 250+ | 1.61 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.02 EUR |
| SI5476DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Description: MOSFET N-CH 60V 12A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.37 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.44 EUR |