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SI5476DU-T1-GE3

SI5476DU-T1-GE3 Vishay Semiconductors

si5476du-1766213.pdf Hersteller: Vishay Semiconductors
MOSFET 60V Vds 20V Vgs PowerPAK ChipFET
auf Bestellung 5440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.18 EUR
10+1.95 EUR
100+1.52 EUR
500+1.25 EUR
1000+0.99 EUR
3000+0.97 EUR
Mindestbestellmenge: 2
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Technische Details SI5476DU-T1-GE3 Vishay Semiconductors

Description: MOSFET N-CH 60V 12A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® ChipFET™ Single, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 10V, Power Dissipation (Max): 3.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® ChipFET™ Single, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V.

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SI5476DU-T1-GE3 SI5476DU-T1-GE3 Hersteller : Vishay Siliconix si5476du.pdf Description: MOSFET N-CH 60V 12A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.8 EUR
100+1.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SI5476DU-T1-GE3 SI5476DU-T1-GE3 Hersteller : Vishay Siliconix si5476du.pdf Description: MOSFET N-CH 60V 12A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
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SI5476DU-T1-GE3 Hersteller : VISHAY si5476du.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 25A; 31W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 25A
Power dissipation: 31W
Case: PowerPAK® ChipFET
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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