SI5479DU-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A PPAK
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® ChipFET™ Single
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® ChipFET™ Single
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
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Technische Details SI5479DU-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 12V 16A PPAK, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: PowerPAK® ChipFET™ Single, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 6.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® ChipFET™ Single, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 8 V, Drain to Source Voltage (Vdss): 12 V.