SI5480DU-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® ChipFET™ Single
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® ChipFET™ Single
Packaging: Tape & Reel (TR)
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Technische Details SI5480DU-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® ChipFET™ Single, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 31W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 7.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® ChipFET™ Single, Packaging: Tape & Reel (TR).