SI5499DC-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6A 1206-8 CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6.2W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details SI5499DC-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 8V 6A 1206-8 CHIPFET, Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 4 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V, Drain to Source Voltage (Vdss): 8 V, Vgs (Max): ±5V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 800mV @ 250µA, Power Dissipation (Max): 2.5W (Ta), 6.2W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 5.1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).