SI5504BDC-T1-E3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.02 EUR |
| 10+ | 1.36 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.71 EUR |
| 3000+ | 0.64 EUR |
| 6000+ | 0.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI5504BDC-T1-E3 Vishay Semiconductors
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8, Part Status: Active, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A, Drain to Source Voltage (Vdss): 30V, Power - Max: 3.12W, 3.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI5504BDC-T1-E3 nach Preis ab 0.77 EUR bis 2.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI5504BDC-T1-E3 | Vishay Siliconix |
 Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.12W, 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active |
auf Bestellung 2690 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| SI5504BDC-T1-E3 |
|
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI5504BDC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 2690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 11+ | 1.62 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.77 EUR |
| SI5504BDC-T1-E3 |
|
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)