Technische Details SI5504DC-T1-E3 VISHAY
Description: MOSFET N/P-CH 30V 2.9A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A, Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 1206-8 ChipFET™, Part Status: Obsolete.
Weitere Produktangebote SI5504DC-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SI5504DC-T1-E3 | Hersteller : VISHAY |
 08+ SSOP20 |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
SI5504DC-T1-E3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 30V 2.9A/2.1A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
|
 |
SI5504DC-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.9A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 1206-8 ChipFET™ Part Status: Obsolete |
Produkt ist nicht verfügbar |
|
|
|
SI5504DC-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.9A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 1206-8 ChipFET™ Part Status: Obsolete |
Produkt ist nicht verfügbar |