Technische Details SI5504DC-T1-E3 VISHAY
Description: MOSFET N/P-CH 30V 2.9A 1206-8, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V, Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A.
Weitere Produktangebote SI5504DC-T1-E3
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SI5504DC-T1-E3 | Vishay Siliconix |
 Description: MOSFET N/P-CH 30V 2.9A 1206-8Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 1206-8 ChipFET™ Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A |
Produkt ist nicht verfügbar |
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SI5504DC-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.9A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 1206-8 ChipFET™ Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI5504DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.9A 1206-8
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Description: MOSFET N/P-CH 30V 2.9A 1206-8
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI5504DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.9A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 2.9A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH