Technische Details SI5853CDC-T1-E3 VISHAY
Description: MOSFET P-CH 20V 4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 2.5A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.5W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V.
Weitere Produktangebote SI5853CDC-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SI5853CDC-T1-E3 | Hersteller : VISHAY |
 1206-8 |
auf Bestellung 5675 Stücke: Lieferzeit 21-28 Tag (e) |
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SI5853CDC-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 4A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 2.5A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.5W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V |
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