
SI5935CDC-T1-E3 Vishay Semiconductors
auf Bestellung 2764 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 1.15 EUR |
10+ | 0.74 EUR |
100+ | 0.49 EUR |
500+ | 0.40 EUR |
1000+ | 0.35 EUR |
3000+ | 0.33 EUR |
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Technische Details SI5935CDC-T1-E3 Vishay Semiconductors
Description: MOSFET 2P-CH 20V 4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Part Status: Active.
Weitere Produktangebote SI5935CDC-T1-E3 nach Preis ab 0.38 EUR bis 1.36 EUR
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SI5935CDC-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active |
auf Bestellung 2817 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5935CDC-T1-E3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 10501 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5935CDC-T1-E3 | Hersteller : Vishay |
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SI5935CDC-T1-E3 | Hersteller : VISHAY |
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Produkt ist nicht verfügbar |
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SI5935CDC-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active |
Produkt ist nicht verfügbar |