
Si5948DU-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.40 EUR |
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Technische Details Si5948DU-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® ChipFet Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V, Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® ChipFet Dual, Part Status: Active.
Weitere Produktangebote Si5948DU-T1-GE3 nach Preis ab 0.46 EUR bis 1.40 EUR
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Si5948DU-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® ChipFet Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® ChipFet Dual Part Status: Active |
auf Bestellung 3301 Stücke: Lieferzeit 10-14 Tag (e) |
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Si5948DU-T1-GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 8777 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5948DU-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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Si5948DU-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 10A Power dissipation: 7W Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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Si5948DU-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 10A Power dissipation: 7W Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |