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Si5948DU-T1-GE3

Si5948DU-T1-GE3 Vishay Siliconix


si5948du.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.59 EUR
Mindestbestellmenge: 3000
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Technische Details Si5948DU-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® ChipFet Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V, Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® ChipFet Dual, Part Status: Active.

Weitere Produktangebote Si5948DU-T1-GE3 nach Preis ab 0.67 EUR bis 1.57 EUR

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Si5948DU-T1-GE3 Si5948DU-T1-GE3 Hersteller : Vishay Siliconix si5948du.pdf Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 3239 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
20+ 1.35 EUR
100+ 0.94 EUR
500+ 0.78 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
Si5948DU-T1-GE3 Si5948DU-T1-GE3 Hersteller : Vishay / Siliconix si5948du.pdf MOSFET 40V Vds 20V Vgs PowerPAK ChipFET
auf Bestellung 11250 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
34+1.57 EUR
39+ 1.36 EUR
100+ 0.94 EUR
500+ 0.82 EUR
Mindestbestellmenge: 34
SI5948DU-T1-GE3 SI5948DU-T1-GE3 Hersteller : Vishay si5948du.pdf Trans MOSFET N-CH 40V 3.7A 8-Pin PowerPAK ChipFET T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Si5948DU-T1-GE3 Hersteller : VISHAY si5948du.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 10A
Power dissipation: 7W
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si5948DU-T1-GE3 Hersteller : VISHAY si5948du.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 10A
Power dissipation: 7W
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar