Si5948DU-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.5 EUR |
| 6000+ | 0.46 EUR |
| 9000+ | 0.44 EUR |
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Technische Details Si5948DU-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® ChipFet Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V, Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® ChipFet Dual, Part Status: Active.
Weitere Produktangebote Si5948DU-T1-GE3 nach Preis ab 0.57 EUR bis 2.01 EUR
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Si5948DU-T1-GE3 | Vishay / Siliconix |
MOSFETs 40V Vds 20V Vgs PowerPAK ChipFET |
auf Bestellung 7813 Stücke: Lieferzeit 10-14 Tag (e) |
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Si5948DU-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® ChipFet Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® ChipFet Dual Part Status: Active |
auf Bestellung 14731 Stücke: Lieferzeit 10-14 Tag (e) |
|
| Si5948DU-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 40V Vds 20V Vgs PowerPAK ChipFET
MOSFETs 40V Vds 20V Vgs PowerPAK ChipFET
auf Bestellung 7813 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.26 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.65 EUR |
| Si5948DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 14731 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.01 EUR |
| 17+ | 1.26 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |