SI6415DQ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 1.3 EUR |
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Technische Details SI6415DQ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V.
Weitere Produktangebote SI6415DQ-T1-GE3 nach Preis ab 1.18 EUR bis 3.63 EUR
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SI6415DQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 6.5A 8TSSOP Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 5069 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6415DQ-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V 6.5A 1.5W 19mohm @ 10V |
auf Bestellung 12868 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI6415DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5069 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.89 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.37 EUR |
| SI6415DQ-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V 6.5A 1.5W 19mohm @ 10V
MOSFETs 30V 6.5A 1.5W 19mohm @ 10V
auf Bestellung 12868 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.63 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.38 EUR |
| 3000+ | 1.18 EUR |