Si6473DQ-T1-E3 VISHAY

Description: MOSFET P-CH 20V 6.2A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 9.5A, 4.5V, Power Dissipation (Max): 1.08W (Ta), Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: 8-TSSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V.