Technische Details Si6562DQ-T1-E3 VISHAY
Description: MOSFET N/P-CH 20V 8-TSSOP, Packaging: Cut Tape (CT), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Supplier Device Package: 8-TSSOP.
Weitere Produktangebote Si6562DQ-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| Si6562DQ-T1-E3 | Hersteller : VISHAY |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| Si6562DQ-T1-E3 | Hersteller : VISHAY | SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI6562DQ-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N/P-CH Si 20V 4.5A/3.5A 8-Pin TSSOP T/R |
Produkt ist nicht verfügbar |
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Si6562DQ-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V 8-TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: 8-TSSOP |
Produkt ist nicht verfügbar |