SI6913DQ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 400µA
Supplier Device Package: 8-TSSOP
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Technische Details SI6913DQ-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 4.9A, Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 400µA, Supplier Device Package: 8-TSSOP.
Weitere Produktangebote SI6913DQ-T1-GE3 nach Preis ab 0.99 EUR bis 3.24 EUR
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SI6913DQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 400µA Supplier Device Package: 8-TSSOP |
auf Bestellung 15688 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6913DQ-T1-GE3 | Vishay Semiconductors |
MOSFETs -12V Vds 8V Vgs TSSOP-8 |
auf Bestellung 3907 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI6913DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 400µA
Supplier Device Package: 8-TSSOP
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 400µA
Supplier Device Package: 8-TSSOP
auf Bestellung 15688 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.17 EUR |
| 10+ | 2.02 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.99 EUR |
| SI6913DQ-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -12V Vds 8V Vgs TSSOP-8
MOSFETs -12V Vds 8V Vgs TSSOP-8
auf Bestellung 3907 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.24 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.11 EUR |