Produktrezensionen
Produktbewertung abgeben
Technische Details SI6926ADQ-T1-GE3 Vishay
Description: VISHAY - SI6926ADQ-T1-GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 4.1 A, 4.1 A, 0.024 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 4.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: 0, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 4.1A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.024ohm, Verlustleistung, p-Kanal: 830mW, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: TSSOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: 0, Verlustleistung, n-Kanal: 830mW, Betriebstemperatur, max.: 0, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote SI6926ADQ-T1-GE3 nach Preis ab 0.57 EUR bis 2.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI6926ADQ-T1-GE3 | Vishay |
 Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SI6926ADQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP Part Status: Active Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A Drain to Source Voltage (Vdss): 20V Power - Max: 830mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI6926ADQ-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R |
auf Bestellung 1798 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SI6926ADQ-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R |
auf Bestellung 1798 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SI6926ADQ-T1-GE3 | Vishay Semiconductors |
MOSFET 20V Vds 8V Vgs TSSOP-8 |
auf Bestellung 5882 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI6926ADQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP Part Status: Active Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A Drain to Source Voltage (Vdss): 20V Power - Max: 830mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 8906 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SI6926ADQ-T1-GE3 | VISHAY |
Description: VISHAY - SI6926ADQ-T1-GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 4.1 A, 4.1 A, 0.024 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: 0 Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.1A Drain-Source-Durchgangswiderstand, p-Kanal: 0.024ohm Verlustleistung, p-Kanal: 830mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: TSSOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm productTraceability: Yes-Date/Lot Code Kanaltyp: 0 Verlustleistung, n-Kanal: 830mW Betriebstemperatur, max.: 0 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 5763 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| SI6926ADQ-T1-GE3 |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI6926ADQ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.65 EUR |
| SI6926ADQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.75 EUR |
| 6000+ | 0.71 EUR |
| SI6926ADQ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 133+ | 1.31 EUR |
| 135+ | 1.27 EUR |
| 175+ | 0.96 EUR |
| 250+ | 0.93 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.67 EUR |
| SI6926ADQ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R
Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 120+ | 1.46 EUR |
| 133+ | 1.26 EUR |
| 135+ | 1.2 EUR |
| 175+ | 0.89 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.57 EUR |
| SI6926ADQ-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFET 20V Vds 8V Vgs TSSOP-8
MOSFET 20V Vds 8V Vgs TSSOP-8
auf Bestellung 5882 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.45 EUR |
| 100+ | 1.3 EUR |
| SI6926ADQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 8906 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.82 EUR |
| 15+ | 1.49 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.8 EUR |
| SI6926ADQ-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI6926ADQ-T1-GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 4.1 A, 4.1 A, 0.024 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 4.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: 0
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 4.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.024ohm
Verlustleistung, p-Kanal: 830mW
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: TSSOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: 0
Verlustleistung, n-Kanal: 830mW
Betriebstemperatur, max.: 0
SVHC: No SVHC (23-Jan-2024)
Description: VISHAY - SI6926ADQ-T1-GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 4.1 A, 4.1 A, 0.024 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 4.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: 0
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 4.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.024ohm
Verlustleistung, p-Kanal: 830mW
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: TSSOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.024ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: 0
Verlustleistung, n-Kanal: 830mW
Betriebstemperatur, max.: 0
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 5763 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 2.34 EUR |
| 132+ | 1.76 EUR |
| 137+ | 1.57 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.45 EUR |
| 5000+ | 1.39 EUR |
| SI6926ADQ-T1-GE3 |
|
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)