Si6954ADQ-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Power - Max: 830mW
| Anzahl | Preis |
|---|---|
| 3000+ | 0.58 EUR |
| 6000+ | 0.54 EUR |
| 9000+ | 0.52 EUR |
| 15000+ | 0.51 EUR |
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Technische Details Si6954ADQ-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A, Drain to Source Voltage (Vdss): 30V, Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Power - Max: 830mW.
Weitere Produktangebote Si6954ADQ-T1-E3 nach Preis ab 0.67 EUR bis 2.62 EUR
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Si6954ADQ-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A Drain to Source Voltage (Vdss): 30V Power - Max: 830mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-TSSOP |
auf Bestellung 21145 Stücke: Lieferzeit 10-14 Tag (e) |
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Si6954ADQ-T1-E3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs TSSOP-8 |
auf Bestellung 3504 Stücke: Lieferzeit 10-14 Tag (e) |
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| Si6954ADQ-T1-E3 | VISHAY |
07+ SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| Si6954ADQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-TSSOP
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-TSSOP
auf Bestellung 21145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 13+ | 1.42 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.67 EUR |
| Si6954ADQ-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs TSSOP-8
MOSFETs 30V Vds 20V Vgs TSSOP-8
auf Bestellung 3504 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.62 EUR |
| 10+ | 1.66 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.79 EUR |
| 3000+ | 0.74 EUR |
| 6000+ | 0.72 EUR |
| Si6954ADQ-T1-E3 |
|
Hersteller: VISHAY
07+ SO-8
07+ SO-8
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)