| Anzahl | Privatkunde |
|---|---|
| 244+ | 0.71 EUR |
| 248+ | 0.69 EUR |
| 252+ | 0.67 EUR |
| 256+ | 0.64 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.61 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI6954ADQ-T1-GE3 Vishay
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A, Drain to Source Voltage (Vdss): 30V, Power - Max: 830mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI6954ADQ-T1-GE3 nach Preis ab 0.52 EUR bis 2.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI6954ADQ-T1-GE3 | Vishay |
 Trans MOSFET N-CH Si 30V 3.1A 8-Pin TSSOP T/R |
auf Bestellung 2386 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SI6954ADQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A Drain to Source Voltage (Vdss): 30V Power - Max: 830mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SI6954ADQ-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs TSSOP-8 |
auf Bestellung 99688 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI6954ADQ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A Drain to Source Voltage (Vdss): 30V Power - Max: 830mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 9919 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI6954ADQ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH Si 30V 3.1A 8-Pin TSSOP T/R
Trans MOSFET N-CH Si 30V 3.1A 8-Pin TSSOP T/R
auf Bestellung 2386 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 0.73 EUR |
| 244+ | 0.69 EUR |
| 248+ | 0.65 EUR |
| 252+ | 0.62 EUR |
| 256+ | 0.58 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.52 EUR |
| SI6954ADQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.73 EUR |
| 6000+ | 0.67 EUR |
| SI6954ADQ-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs TSSOP-8
MOSFETs 30V Vds 20V Vgs TSSOP-8
auf Bestellung 99688 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.51 EUR |
| 10+ | 1.58 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.82 EUR |
| 3000+ | 0.81 EUR |
| 6000+ | 0.74 EUR |
| 24000+ | 0.73 EUR |
| SI6954ADQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 9919 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.76 EUR |
| 12+ | 1.75 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.82 EUR |