auf Bestellung 2386 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 244+ | 0.60 EUR |
| 248+ | 0.57 EUR |
| 252+ | 0.54 EUR |
| 256+ | 0.51 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI6954ADQ-T1-GE3 Vishay
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.1A, Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-TSSOP.
Weitere Produktangebote SI6954ADQ-T1-GE3 nach Preis ab 0.44 EUR bis 2.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI6954ADQ-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH Si 30V 3.1A 8-Pin TSSOP T/R |
auf Bestellung 2386 Stücke: Lieferzeit 14-21 Tag (e) |
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SI6954ADQ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-TSSOP |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6954ADQ-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs TSSOP-8 |
auf Bestellung 99819 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6954ADQ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-TSSOP |
auf Bestellung 9919 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6954ADQ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH Si 30V 3.1A 8-Pin TSSOP T/R |
Produkt ist nicht verfügbar |
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SI6954ADQ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH Si 30V 3.1A 8-Pin TSSOP T/R |
Produkt ist nicht verfügbar |
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| SI6954ADQ-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.4A Pulsed drain current: 20A Power dissipation: 1W Case: TSSOP8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI6954ADQ-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 20A; 1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.4A Pulsed drain current: 20A Power dissipation: 1W Case: TSSOP8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |