SI7113ADN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 100V 10.8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 132mOhm @ 3.8A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 50 V
auf Bestellung 2385 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 1.02 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.48 EUR |
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Technische Details SI7113ADN-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 100V 10.8A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc), Rds On (Max) @ Id, Vgs: 132mOhm @ 3.8A, 10V, Power Dissipation (Max): 27.8W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 50 V.
Weitere Produktangebote SI7113ADN-T1-GE3 nach Preis ab 0.91 EUR bis 7.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI7113ADN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 7910 Stücke: Lieferzeit 463-477 Tag (e) |
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SI7113ADN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 10.8A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Rds On (Max) @ Id, Vgs: 132mOhm @ 3.8A, 10V Power Dissipation (Max): 27.8W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 50 V |
auf Bestellung 2385 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7113ADN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 10.8A 8-Pin PowerPAK 1212 EP |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7113ADN-T1-GE3 | Hersteller : Siliconix |
Trans MOSFET P-CH 100V 3.8A 8-Pin PowerPAK 1212 EP SI7113ADN-T1-GE3 VISHAY TSI7113adn Anzahl je Verpackung: 2 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI7113ADN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -10.8A Pulsed drain current: -20A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 132mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7113ADN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -10.8A; Idm: -20A; 17.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -10.8A Pulsed drain current: -20A Power dissipation: 17.8W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 132mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |