Produkte > VISHAY SILICONIX > SI7115DN-T1-GE3
SI7115DN-T1-GE3

SI7115DN-T1-GE3 Vishay Siliconix


si7115dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.16 EUR
6000+ 2.08 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SI7115DN-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 150V 8.9A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc), Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V.

Weitere Produktangebote SI7115DN-T1-GE3 nach Preis ab 2.18 EUR bis 4.84 EUR

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SI7115DN-T1-GE3 SI7115DN-T1-GE3 Hersteller : Vishay Siliconix si7115dn.pdf Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
auf Bestellung 7053 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.81 EUR
10+ 3.98 EUR
100+ 3.17 EUR
500+ 2.68 EUR
1000+ 2.27 EUR
Mindestbestellmenge: 6
SI7115DN-T1-GE3 SI7115DN-T1-GE3 Hersteller : Vishay Semiconductors si7115dn.pdf MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 9767 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+4.84 EUR
13+ 4 EUR
100+ 3.2 EUR
250+ 2.94 EUR
500+ 2.68 EUR
1000+ 2.29 EUR
3000+ 2.18 EUR
Mindestbestellmenge: 11
SI7115DN-T1-GE3 SI7115DN-T1-GE3 Hersteller : VISHAY VISH-S-A0001121102-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: VISHAY - SI7115DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 150 V, 8.9 A, 0.245 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.9A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 52W
Anzahl der Pins: 8Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.245ohm
auf Bestellung 18769 Stücke:
Lieferzeit 14-21 Tag (e)
SI7115DN-T1-GE3 Hersteller : Vishay / Siliconix si7115dn-279776.pdf MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 8074 Stücke:
Lieferzeit 14-28 Tag (e)
SI7115DN-T1-GE3 SI7115DN-T1-GE3
Produktcode: 102378
Hersteller : Vishay si7115dn.pdf Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
SI7115DN-T1-GE3 Hersteller : VISHAY si7115dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7115DN-T1-GE3 Hersteller : VISHAY si7115dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar