SI7116DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10.5A PPAK1212-8
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
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Technische Details SI7116DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 10.5A PPAK1212-8, Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.5W (Ta).
Weitere Produktangebote SI7116DN-T1-GE3 nach Preis ab 1.68 EUR bis 5.19 EUR
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SI7116DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V |
auf Bestellung 6449 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7116DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 10.5A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V |
auf Bestellung 5043 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7116DN-T1-GE3 |
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auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7116DN-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V
MOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V
auf Bestellung 6449 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.66 EUR |
| 10+ | 3.03 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.78 EUR |
| 3000+ | 1.68 EUR |
| SI7116DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10.5A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Description: MOSFET N-CH 40V 10.5A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
auf Bestellung 5043 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.19 EUR |
| 10+ | 3.38 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.89 EUR |
| 1000+ | 1.75 EUR |
| SI7116DN-T1-GE3 |
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auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)