SI7121DN-T1-GE3
Produktcode: 167442
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Weitere Produktangebote SI7121DN-T1-GE3 nach Preis ab 0.77 EUR bis 2.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SI7121DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 16A PPAK1212-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7121DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 16A PPAK1212-8 Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
auf Bestellung 10238 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7121DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V 16A 52W 1.8mohm @ 10V |
auf Bestellung 3929 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7121DN-T1-GE3 |
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auf Bestellung 5816 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7121DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Description: MOSFET P-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.77 EUR |
| SI7121DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 16A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 10238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.52 EUR |
| 10+ | 1.77 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.94 EUR |
| SI7121DN-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 30V 16A 52W 1.8mohm @ 10V
MOSFETs 30V 16A 52W 1.8mohm @ 10V
auf Bestellung 3929 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.75 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| 3000+ | 0.78 EUR |
| SI7121DN-T1-GE3 |
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auf Bestellung 5816 Stücke:
Lieferzeit 21-28 Tag (e)