auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7121DN-T1-GE3 Vishay
Description: MOSFET P-CH 30V 16A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V.
Weitere Produktangebote SI7121DN-T1-GE3 nach Preis ab 0.70 EUR bis 2.52 EUR
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SI7121DN-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7121DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 16A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7121DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7121DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 16A 52W 1.8mohm @ 10V |
auf Bestellung 9316 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7121DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 16A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V |
auf Bestellung 10238 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 5816 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7121DN-T1-GE3 Produktcode: 167442
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Lieblingsprodukt
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Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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SI7121DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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SI7121DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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| SI7121DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -16A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -16A Pulsed drain current: -50A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 30.5mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7121DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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| SI7121DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -16A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -16A Pulsed drain current: -50A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 30.5mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |