SI7139DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 15 V
Description: MOSFET P-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1 EUR |
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Technische Details SI7139DP-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 40A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 15 V.
Weitere Produktangebote SI7139DP-T1-GE3 nach Preis ab 1.33 EUR bis 45.31 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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SI7139DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 40A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7139DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 40A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7139DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 40A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 15 V |
auf Bestellung 5760 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7139DP-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET -30V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 356 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7139DP-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI7139DP-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 40 A, 0.0074 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 48W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0074ohm |
auf Bestellung 5310 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7139DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 40A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7139DP T1-GE3 | Hersteller : Siliconix |
P-MOSFET 30V 40A 5W SI7139DP-GE3 SI7139DP-T1-GE3 SI7139DP smd Vishay TSI7139dp Anzahl je Verpackung: 2 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7139DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 40A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SI7139DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 40A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SI7139DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -40A Pulsed drain current: -70A Power dissipation: 30W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 146nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7139DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; Idm: -70A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -40A Pulsed drain current: -70A Power dissipation: 30W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 146nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |